Effects of different current confinement layers in GaN-based VCSELs

For GaN-based vertical-cavity surface-emitting lasers (VCSELs), a suitable current confinement layer is essential for high-performance devices. The effect of different layers, including SiO2, AlN, and diamond, on the performance VCSELs was compared through simulation. devices’ heat dissipation characteristics were analyzed based electro-opto-thermal model. Considering thermal management, diamond better candidate under high injected current. Benefiting from excellent dissipation, device with shows significant improvement in output power roll-over This work gives superior option can be helpful future design fabrication high-power VCSELs.